2sa733 ? pnp general purpose amplifier ? 2009 fairchild semiconductor corporation www.fairchildsemi.com 2sa733 rev. a0 1 september 2009 2sa733 pnp general purpose amplifier features ? this device is designed for general purpose amplifier applications at collector currents to 300 ma. ? sourced from process 68. absolute maximum ratings* t a =25 c unless otherwise noted * these ratings are limiting values above which the servic eability of any semiconductor device may be impaired. notes: 1) these ratings are based on a maximum junction temperature of 150 degrees c. 2) these are steady state limit s. the factory should be co nsulted on applications invo lving pulsed or low duty cycle operations. thermal characteristics t a =25 c unless otherwise noted symbol parameter value units v cbo collector-base voltage -60 v v ceo collector-emitter voltage -50 v v ebo emitter-base voltage -5.0 v i c collector current - continuous -500 ma t j , t stg operating and storage junction temperature range -55 to +150 c symbol parameter max units p d total device dissipation derate above 25 c 625 5.0 mw mw/ c r jc thermal resistance, junction to case 83.3 c/w r ja thermal resistance, junction to ambient 200 c/w to-92 1 1. emitter 2. collector 3.base
2sa733 ? pnp general purpose amplifier ? 2009 fairchild semiconductor corporation www.fairchildsemi.com 2sa733 rev. a0 2 electrical characteristics t a =25 c unless otherwise noted * pulse test: pulse width 300 s, duty cycle 2.0% h fe classification symbol parameter test condition min. typ. max. units off characteristics v cbo collector-base breakdown voltage i c = -10 a, i e = 0 -60 v v ceo collector-emitter breakdown voltage i c = -1ma, i b = 0 -50 v v ebo emitter-base breakdown voltage i e = -10 a, i c = 0 -5.0 v i cbo collector cut-off current v cb = -60v, i e = 0 -100 na i ebo emitter cut-off current v eb = -5v, i c = 0 -100 na on characteristics h fe dc current gain v ce = -6v, i c = -1ma 90 600 v ce (sat) collector-emitter saturation voltage i c = -100ma, i b = -10ma -15 -300 mv v be (on) base-emitter on voltage v ce = -6v, i c = -1ma -580 -680 mv small signal characteristics f t current gain bandwidth product v ce = -6v, i c = -10ma 50 mhz c ob output capacitance v cb = -10v, i e = 0 f = 1.0mhz 6pf nf noise figure v ce = -6v, i c = -0.3ma r g = 10k , f = 100hz 20 db classification r q p k h fe 90 ~ 180 135 ~ 270 200 ~ 400 300 ~ 600
2sa733 ? pnp general purpose amplifier ? 2009 fairchild semiconductor corporation www.fairchildsemi.com 2sa733 rev. a0 3 physical dimension dimensions in millimeters to-92
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